Substrate-with-support

ABSTRACT

A substrate-with-support includes: a substrate having a wiring area, an outer peripheral area provided on an outer peripheral side of the wiring area, and a plurality of support joint portions being provided on the outer peripheral area; and a support made of metal having an outer frame portion arranged to face the outer peripheral area and to expose the wiring area, and a plurality of protruding portions being provided on the outer frame portion, wherein the support joint portions and the protruding portions are joined to each other.

CROSS-REFERENCE TO RELATED APPLICATION

This application is based upon and claims priority to Japanese PatentApplication No. 2018-003323, filed on Jan. 12, 2018, the entire contentsof which are incorporated herein by reference.

FIELD

The embodiments discussed herein relate to a substrate-with-support.

BACKGROUND

A substrate for mounting a semiconductor chip on which a semiconductorchip is mounted to be a part of a semiconductor package is known. Inaccordance with demands for semiconductor packages having a lowerprofile, the total thickness of substrates to be applied is alsorequired to be thin.

For example, although a coreless substrate is suitable for thinning dueto not having a core, handling of the substrate becomes difficult as thethickness of the substrate is reduced, and it becomes difficult toassemble a semiconductor package including mounting of a semiconductorchip and the like.

Therefore, in order to improve handling, a substrate-with-support isproposed in which an insulating layer and a wiring layer aresequentially stacked on a support such as a metal plate. With thissubstrate-with-support, it is possible to easily mount a semiconductorchip or the like by enhancement of the strength due to the presence ofthe support. After completing the mounting of the semiconductor chip,the semiconductor chip is sealed with a resin, and thereafter thesupport is peeled off.

RELATED-ART DOCUMENTS Patent Documents

-   [Patent Document 1] Japanese Laid-open Patent Publication No.    2010-50351-   [Patent Document 2] Japanese Laid-open Patent Publication No.    2007-165513

However, because the entire back surface of the substrate-with-supportdescribed above is covered with the support, an external connection padformed on the back surface is not exposed to the outside. Therefore, thesubstrate-with-support described above has a problem that it isimpossible to perform an electric test that is carried out by applying aprobe onto a pad such as an Open/Short test.

SUMMARY

According to an aspect of the embodiments, a substrate-with-supportincludes: a substrate having a wiring area, an outer peripheral areaprovided on an outer peripheral side of the wiring area, and a pluralityof support joint portions being provided on the outer peripheral area;and a support made of metal having an outer frame portion arranged toface the outer peripheral area and to expose the wiring area, and aplurality of protruding portions being provided on the outer frameportion, wherein the support joint portions and the protruding portionsare joined to each other.

The object and advantages of the invention will be realized and attainedby means of the elements and combinations particularly pointed out inthe claims.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory and notrestrictive of the invention, as claimed.

BRIEF DESCRIPTION OF DRAWINGS

FIGS. 1A and 1B are diagrams illustrating an example of asubstrate-with-support according to the first embodiment;

FIGS. 2A to 2C are diagrams illustrating an example of thesubstrate-with-support according to the first embodiment;

FIG. 3 is a plan view illustrating an example of a substrateconstituting the substrate-with-support according to the firstembodiment;

FIGS. 4A to 4C are diagrams illustrating an example of steps ofmanufacturing the substrate-with-support according to the firstembodiment;

FIGS. 5A and 5B are diagrams illustrating an example of steps ofmanufacturing semiconductor packages using the substrate-with-supportaccording to the first embodiment (part 1);

FIGS. 6A and 6B are diagrams illustrating an example of steps ofmanufacturing the semiconductor packages using thesubstrate-with-support according to the first embodiment (part 2);

FIGS. 7A and 7B are diagrams illustrating an example of asubstrate-with-support according to variation example 1 of the firstembodiment;

FIGS. 8A and 8B are diagrams illustrating an example of steps ofmanufacturing semiconductor packages using the substrate-with-supportaccording to variation example 1 of the first embodiment (part 1);

FIGS. 9A and 9B are diagrams illustrating an example of steps ofmanufacturing the semiconductor packages using thesubstrate-with-support according to variation example 1 of the firstembodiment (part 2); and

FIGS. 10A and 10B are diagrams illustrating an example of asubstrate-with-support according to variation example 2 of the firstembodiment.

DESCRIPTION OF EMBODIMENTS

In the following, an embodiment will be described with reference to theaccompanying drawings. Note that in these drawings, the same elementsare referred to by the same reference numerals, and duplicatedescriptions may be omitted as appropriate.

First Embodiment

[Structure of Substrate-With-Support]

FIGS. 1A and 1B are diagrams illustrating an example of asubstrate-with-support 1 according to a first embodiment (part 1). FIG.1A is a plan view of the substrate-with-support 1, and FIG. 1B is across-sectional view of the substrate-with-support 1 taken along theline A-A of FIG. 1A. Also, FIGS. 2A to 2C are diagrams illustrating anexample of the substrate-with-support 1 according to the firstembodiment (part 2). FIG. 2A is a cross-sectional view of thesubstrate-with-support 1 taken along the line B-B of FIG. 1A, FIG. 2B isa partially enlarged cross-sectional view in the vicinity of an outerperipheral area D4 of FIG. 2A, and FIG. 2C is a view illustrating only asupport 30 extracted from FIG. 2B. FIG. 3 is a plan view illustrating anexample of a substrate 10 constituting the substrate-with-support 1according to the first embodiment.

With reference to FIGS. 1 to 3, the substrate-with-support 1 includesthe substrate 10 and the support 30. The support 30 has a size that issubstantially the same size as that of the substrate 10, and is joinedto the substrate 10. As an example, the substrate 10 and the support 30have a rectangular shape (oblong shape) in plan view.

(Substrate 10)

In the substrate 10, a first wiring area D1, in which a plurality of(twenty in the example of the first embodiment) areas C to be separatedto be wiring substrates are arrayed vertically and horizontally, and asecond wiring area D2, in which a plurality of (twenty in the example ofthe first embodiment) areas C to be separated to be wiring substratesare arrayed vertically and horizontally, are arranged via a separatingarea D3. A frame-shaped outer peripheral area D4 is provided on theouter peripheral side of the first wiring area D1, the second wiringarea D2, and the separating area D3.

In other words, two areas sectioned by the frame-shaped outer peripheralarea D4 and the separating area D3, separating the portion surrounded bythe outer peripheral area D4 into a plurality of areas, are the firstwiring area D1 and the second wiring area D2. For example, theseparating area D3 can be formed so as to bridge the portions on theopposite long sides of the outer peripheral area D4 so as to divide theportion surrounded by the outer peripheral area D4 into twosubstantially equal parts.

Note that the substrate 10 is a substrate for mounting semiconductorchips on which semiconductor chips can be mounted. Therefore, afterprocesses such as mounting the semiconductor chips on the substrate 10,mounting solder balls, and sealing with resin, the plurality of areas Care separated.

The substrate 10 includes a wiring layer 11, an insulating layer 12, awiring layer 13, a solder resist layer 14, metal layers 15 and 16, aninsulating layer 22, a wiring layer 23, a solder resist layer 24, andmetal layers 25 and 26.

Note that according to the first embodiment, for convenience ofdescription, the solder resist layer 14 side of the substrate 10constituting the substrate-with-support 1 is referred to as an upperside or one side, and the solder resist layer 24 side of the substrate10 is referred to as a lower side or the other side. Also, with respectto each part or element of the substrate-with-support 1, a solder resistlayer 14 side surface is referred to as one surface or an upper surface,and a solder resist layer 24 side surface is referred to as the othersurface or a lower surface. Note that the substrate-with-support 1,however, may be used in an inverted position or may be oriented at adesired angle. Also, a plan view refers to a view of an object taken ina direction normal to one surface of the insulating layer 12, and aplanar shape refers to the shape of an object viewed in a directionnormal to one surface of the insulating layer 12.

In the substrate 10, the wiring layer 11 is formed on the lower surfaceof the insulating layer 12. As a material of the wiring layer 11, forexample, copper (Cu) or the like can be used. For example, the thicknessof the wiring layer 11 may be in a range of approximately 2 μm toapproximately 10 μm.

The insulating layer 12 covers the upper surface of the wiring layer 11.As a material of the insulating layer 12, for example, a thermosettinginsulating resin whose main component is an epoxy resin, an imide resin,a phenolic resin, a cyanate resin or the like can be used. Thethermosetting insulating resin used as the insulating layer 12 may be anon-photosensitive insulating resin or may be a photosensitiveinsulating resin. Also, the insulating layer 12 may include areinforcing member made of a nonwoven fabric or a woven fabric such asglass fiber or aramid fiber. Also, the insulating layer 12 may include afiller such as silica (SiO₂). The thickness of the insulating layer 12can be, for example, in a range of approximately 10 μm to approximately30 μm.

The wiring layer 13 is formed on the upper surface side of theinsulating layer 12 and is electrically connected to the wiring layer11. The wiring layer 13 is configured to include via wirings 13 afilling via holes 12 x that penetrate the insulating layer 12 and exposethe upper surface of the wiring layer 11 and include a wiring pattern 13b formed on the upper surface of the insulating layer 12. As a materialof the wiring layer 13, for example, copper (Cu) or the like can beused. The thickness of the wiring pattern 13 b constituting the wiringlayer 13 can be, for example, in a range of approximately 2 μm am toapproximately 10 μm.

For example, each of the via holes 12 x can be a recessed portion havingan inverted truncated cone shape in which the diameter of the openingportion opened on the wiring layer 13 side is larger than the diameterof the bottom surface of the opening portion formed by the upper surfaceof the wiring layer 11. The diameter of the opening portion of each ofthe via holes 12 x on the wiring layer 13 side can be, for example,approximately 200 μm.

The solder resist layer 14 is an insulating layer formed on the uppersurface of the insulating layer 12 so as to cover the wiring layer 13.As a material of the solder resist layer 14, for example, athermosetting insulating resin whose main component is a phenolic resin,a polyimide resin or the like can be used. The solder resist layer 14may include a filler such as silica (SiO₂).

The solder resist layer 14 has opening portions 14 x, and a part of thewiring layer 13 is exposed in each of the opening portions 14 x. Thewiring layer 13 exposed in each of the opening portions 14 x functionsas a pad to which an external connection terminal such as a solder ballis connected, for example. The thickness of the solder resist layer 14can be, for example, in a range of approximately 10 μm to approximately20 μm. The planar shape of each of the opening portions 14 x may be, forexample, a circular shape having a diameter of approximately 300 μm.

Metal layers 15 and 16 are sequentially stacked on the upper surface ofthe wiring layer 13 exposed in the opening portions 14 x. The metallayers 15 and 16 are surface treatment layers for enhancing theconnection reliability with external connection terminals such as solderballs and can be provided as needed. As the metal layer 15, for example,nickel (Ni) or the like can be used. The thickness of the metal layer 15can be, for example, in a range of approximately 0.2 μm to 1 μm. As themetal layer 16, for example, gold (Au) or the like can be used. Thethickness of the metal layer 16 can be, for example, in a range of 0.01μm to 0.05 μm. Another metal layer such as palladium (Pd) may be furtherstacked between the metal layer 15 and the metal layer 16.

The insulating layer 22 is formed on the lower surface of the insulatinglayer 12 so as to cover the lower surface and the side surface of thewiring layer 11. The material and the thickness of the insulating layer22 can be, for example, similar to those of the insulating layer 12. Theinsulating layer 22 may include a reinforcing member made of a nonwovenfabric or a woven fabric such as glass fiber or aramid fiber. Also, theinsulating layer 22 may include a filler such as silica (SiO₂).

The wiring layer 23 is formed on the lower surface side of theinsulating layer 22 and is electrically connected to the wiring layer11. The wiring layer 23 is configured to include via wirings 23 afilling via holes 22 x that penetrate the insulating layer 22 and exposethe lower surface of the wiring layer 11 and a wiring pattern 23 bformed on the lower surface of the insulating layer 22. The material ofthe wiring layer 23 and the thickness of the wiring pattern 23 bconstituting the wiring layer 23 can be similar to those for the wiringlayer 13, for example.

For example, each of the via holes 22 x can be a recessed portion havinga truncated cone shape in which the diameter of the opening portionopened on the wiring layer 23 side is larger than the diameter of thebottom surface of the opening portion formed by the lower surface of thewiring layer 11. The diameter of the opening portion of each of the viaholes 22 x on the wiring layer 23 side can be, for example,approximately 200 μm.

The solder resist layer 24 is an insulating layer formed on the lowersurface of the insulating layer 22 so as to cover the wiring layer 23.The material and thickness of the solder resist layer 24 can be, forexample, similar to those of the solder resist layer 14. The solderresist layer 24 may include a filler such as silica (SiO₂).

The solder resist layer 24 has opening portions 24 x, and a part of thewiring layer 23 is exposed in each of the opening portions 24 x. Thewiring layer 23 exposed in each of the opening portions 24 x functions,for example, as a pad connected to a semiconductor chip. The planarshape of each of the opening portions 24 x can be, for example, acircular shape having a diameter of approximately 300 μm.

Metal layers 25 and 26 are sequentially stacked on the lower surface ofthe wiring layer 23 exposed in the opening portions 24 x. The metallayers 25 and 26 are surface treatment layers for enhancing theconnection reliability with bonding wires or the like for connectionwith semiconductor chips, and can be provided as needed. The materialand the thickness of the metal layers 25 and 26 can be similar to thoseof the metal layers 15 and 16, for example. Another metal layer such aspalladium (Pd) may be further stacked between the metal layer 25 and themetal layer 26.

On the separating area D3 and the outer peripheral area D4 of thesubstrate 10, a plurality of support joint portions E1 are discretelyprovided. The support joint portions E1 are portions that are joined tothe support 30. The number of the support joint portions E1 and thepositions at which the support joint portion E1 are provided can bedetermined as appropriate in consideration of the joint strength and thelike required between the substrate 10 and the support 30.

The respective support joint portions E1 are conductor portions providedin the insulating layers 12 and 22 and the solder resist layers 14 and24 constituting the substrate 10. Each of the support joint portions E1has a wiring layer structure similar to that in the first wiring area D1and the second wiring area D2 of the substrate 10. More specifically,each of the support joint portions E1 has a conductor portion having acolumnar structure, in which the wiring pattern 23 b, the via wiring 23a, the wiring layer 11, the via wiring 13 a, the wiring pattern 13 b,the metal layer 15, and the metal layer 16 are formed to havesubstantially circular shapes as their respective planar shapes andthese are substantially concentrically stacked. Note that the wiringlayers 13 and 23 of the support joint portions E1 are electricallyseparated from the wiring layers 13 and 23 of the areas C to beseparated as wiring substrates.

The columnar structure of each of the support joint portions E1 includesthe via wiring 13 a formed in the insulating layer 12 and the via wiring23 a formed in the insulating layer 22. Further, the via wiring 13 a andthe via wiring 23 a are of a stack via structure in which the via wiring13 a and the via wiring 23 a are arranged to face each other via thewiring layer 11, and form a part of the columnar structure of theconductor portion.

Each of the support joint portions E1 is formed across the plurality ofinsulating layers (the insulating layers 12 and 22 and the solder resistlayers 14 and 24), and the upper surface of the metal layer 16 serves asexposed portions exposed in the respective opening portions 14 x of thesolder resist layer 14 and joined to the support 30.

Note that the metal layers 25 and 26 are not provided in the supportjoint portions E1. For the substrate 10, after forming the wiring layers13 and 23, the solder resist layers 14 and 24 having the openingportions 14 x and 24 x are formed on the wiring layers 13 and 23. Atthis time, the wiring layer 23 of the support joint portions E1 iscovered with the solder resist layer (because there is no need to exposefrom the solder resist layer 24, an opening portion 24 x is not formed).Thereafter, on the wiring layers 13 and 23 exposed from the openingportions 14 x and 24 x of the solder resist layers 14 and 24, the metallayers 15, 16, 25 and 26 are formed by plating. Therefore, the metallayers 25 and 26 are not provided on the wiring layer 23 of each of thesupport joint portions E1 where an opening portion 24 x is not formed.

The substrate 10 is a substrate for mounting semiconductor chips onwhich semiconductor chips can be mounted. The total thickness of thesubstrate 10 (the thickness from the lower surface of the solder resistlayer 24 to the upper surface of the solder resist layer 14) is in arange of approximately 50 μm to approximately 100 μm, and the substrate10 does not have sufficient strength. Therefore, by the substrate 10alone, handling in steps of manufacturing semiconductor packages, suchas mounting semiconductor chips and mounting solder balls is difficult.Therefore, in order to improve the strength, the support 30 describedbelow is bonded to the substrate 10.

(Support 30)

The support 30 includes an outer frame portion 31 that is arranged toface the outer peripheral area D4 of the substrate 10 and a bridgeportion 32 that is arranged to face the separating area D3 of thesubstrate 10. For example, the bridge portion 32 can be formed so as tobridge the portions on the opposite long sides of the outer frameportion 31 so as to divide the space surrounded by the outer frameportion 31 into two substantially equal parts. The first wiring area D1and the second wiring area D2 of the substrate 10 are exposed from theouter frame portion 31 and the bridge portion 32 of the support 30. Thesupport 30 is made of metal, and the outer frame portion 31 and thebridge portion 32 are integrally formed of a metal material such ascopper (Cu), for example.

On the support 30, a plurality of protruding portions 33 are provided onthe side of the outer frame portion 31 facing the outer peripheral areaD4 of the substrate 10 and on the side of the bridge portion 32 facingthe separating area D3 of the substrate 10. For example, each of theprotruding portions 33 can have a shape that reduces in width as it goestoward the tip (toward the substrate 10). The planar shape of the tipside of the each of the protruding portion 33 is, for example, acircular shape, and in this case, the diameter φ₁ can be approximately250 μm, for example. The thickness T₁ of the outer frame portion 31 andthe bridge portion 32 (the thickness of the support 30 at portions wherethe protruding portions 33 are not formed) can be, for example,approximately 130 μm. The thickness T₂ of each of the protrudingportions 33 (amount of protrusion) can be, for example, approximately 70μm.

In the support 30, through holes 35 penetrating the outer frame portion31 and the protruding portions 33 in the thickness direction areprovided. Similarly, through holes 35 penetrating the bridge portion 32and the protruding portions 33 in the thickness direction are provided.It is preferable to provide the through holes 35 at positions out of theextension lines of the division lines (broken lines indicating the areasC). With such an arrangement, it is possible to prevent a contactbetween a blade and the support 30 when separating the areas C intoindividual pieces.

Each of the through holes 35 is formed, for example, such that a firsthole 35 x and a second hole 35 y are in communication, in which thefirst hole 35 x is opened on the outer side of the outer frame portion31 or the bridge portion 32 and whose opening size decreases toward theprotruding portion 33, and the second hole 35 y is opened on the tipside of the protruding portion 33 and whose opening size decreasestoward the first hole 35 x. For each of the through holes 35, a minimumopening portion 35 z, whose opening is the smallest within the throughhole 35, is formed on the support joint portion E1 side with respect tothe center in the thickness direction of an inner wall of the throughhole 35. Each of the minimum opening portions 35 z is a portion wherethe first hole 35 x and the second hole 35 y are in communication and isa portion that protrudes most toward the center within the through hole35.

The planar shape of the maximum opening portion of each of the firstholes 35 x is circular, for example, and in this case, the diameter φ₂can be, for example, approximately 200 μm. The planar shape of themaximum opening portion of each of the second holes 35 y is circular,for example, and in this case, the diameter φ₃ can be, for example,approximately 150 μm. The planar shape of each of the minimum openingportions 35 z is circular, for example, and in this case, the diameterφ₄ can be, for example, approximately 100 μm.

The protruding portions 33 are provided at positions corresponding tothe respective support joint portions E1 provided on the outerperipheral area D4 and the separating area D3 of the substrate 10. Then,the support joint portions E1, provided on the outer peripheral area D4,and the protruding portions 33, provided on the outer frame portion 31,are joined to each other, and the support joint portions E1, provided onthe separating area D3, and the protruding portions 33, provided on thebridge portion 32, are joined to each other. Specifically, the uppersurface of the metal layer 16 of the support joint portions E1 exposedin the opening portions 14 x of the solder resist layer 14 is in contactwith the tips of the protruding portions 33, such that the support jointportions E1 and the protruding portion 33 are joined to each other.

Note that only the tips of the protruding portions 33 of the support 30are joined to the substrate 10, and a gap is formed between the outerperipheral area D4 of the substrate 10 and the lower surface of theouter frame portion 31 of the support 30 (area where the protrudingportions 33 are not formed). Similarly, a gap is formed between theseparating area D3 of the substrate 10 and the lower surface of thebridge portion 32 of the support 30 (area where the protruding portions33 are not formed).

The support joint portions E1 and the protruding portions 33 can bejoined by, for example, welding. In this case, at least part of theprotruding portions 33 and the support joint portions E1 are integratedto form welded portions F. In a case where the support joint portions E1and the protruding portions 33 are joined by welding, it is preferableto form a main part of the support joint portions E1 and the support 30with a same material such as copper or a copper alloy.

For example, the wiring layers 11, 13, and 23 of the support jointportions E1 are formed of copper or a copper alloy, and the support 30is also made of copper or a copper alloy. In this case, even when metallayers 15 and 16 made of another material are interposed between thewiring layer 13 of the support joint portions E1 and the protrudingportions 33 of the support 30, the support joint portions E1 and theprotruding portion 33 of the support 30 can be laser-welded.

In the laser welding, for example, the inner wall side of the throughhole 35 including the minimum opening portion 35 z of the protrudingportion 33, the center side of the metal layers 15 and 16, the centerside of the wiring pattern 13 b and the via wiring 13 a are melted andintegrated to form each welded portion F. However, the ranges in whichwelded portions F formed differ depending on the position to which thelaser is emitted, emission power of the laser, and the like, and thewelded portion F illustrated in FIG. 2 B is an example.

[Method of Manufacturing Substrate-With-Support]

Next, a method of manufacturing the substrate-with-support 1 accordingto the first embodiment will be described. FIGS. 4A to 4C are diagramsillustrating an example of the steps of manufacturing thesubstrate-with-support 1 according to the first embodiment, andillustrate cross sections corresponding to FIG. 2A.

First, in the step illustrated in FIG. 4A, a metal plate 300 (forexample, a copper plate) for manufacturing the support 30 is prepared.The thickness of the metal plate 300 can be, for example, approximately200 μm. Next, a photosensitive dry film resist or the like is formed onthe entire upper surface of the metal plate 300, exposed and developedto form a resist layer 350 having opening portions 350 x. Similarly, aphotosensitive dry film resist or the like is formed on the entire lowersurface of the metal plate 300, and exposed and developed to form aresist layer 360 having opening portions 360 x. In the resist layers 350and 360, opening portions 350 a and 360 a are provided at locationscorresponding to the first wiring area D1 and the second wiring area D2.

Next, in the step illustrated in FIG. 4B, using the resist layers 350and 360 as etching masks, the metal plate 300 is half-etched from bothsides. After the half etching, the resist layers 350 and 360 areremoved. Thereby, the support 30 made of metal having the outer frameportion 31 and the bridge portion 32 having the planar shape asillustrated in FIG. 1A and provided with the protruding portions 33(including the through holes 35) having the cross-sectional shape asillustrated in FIGS. 2 on the lower surface of the outer frame portion31 and the lower surface of the bridge portion 32 is prepared. In a casewhere the metal plate 300 is a copper plate, the metal plate 300 can behalf-etched using, for example, a cupric chloride aqueous solution.

Note that in each area where the opening portion 350 x and the openingportion 360 x overlap in plan view, the metal plate 300 is half-etchedfrom both sides to penetrate the metal plate 300. In particular, in eachportion where the through hole 35 is formed, by making the openingdiameter of the opening portion 350 x larger than the opening diameterof the opening portion 360 x, the minimum opening portion 35 z, which isthe portion where the first hole 35 x and the second hole 35 y are incommunication, can be located below the center in the thicknessdirection of the inner wall of the through hole 35.

Next, in the step illustrated in FIG. 4C, the substrate 10 illustratedin FIGS. 1 to 3 is prepared. The substrate 10 can be formed by, forexample, a known build-up method or the like. Then, the support 30 isjoined to the substrate 10. Here, an example of joining the support 30to the substrate 10 by welding is described.

Specifically, the support 30 is arranged on the substrate 10 such thatthe tips of the respective protruding portions 33 of the support 30contact the metal layer 16, which serves as the exposed portions of thesupport joint portions E1 of the substrate 10. Then, laser light L isemitted into the through holes 35 from the first hole 35 x side. Notethat a part of the laser light L may be emitted to the outside of thethrough holes 35. As the laser used here, it is possible to select alaser capable of emitting a wavelength that is sufficiently absorbedwith respect to a material constituting the support joint portions E1and the protruding portions 33. For example, a green laser can be usedwhen the material constituting the support joint portions E1 and theprotruding portions 33 is copper or a copper alloy.

Here, because the minimum opening 35 z protrudes most toward the centerwithin each of the through holes 35, the laser light L, emitted intoeach of the through holes 35, is emitted to the vicinity of the minimumopening portion 35 z and to the metal layer 16 passing through thethrough hole 35. Heat generated in the vicinity of the minimum openingportions 35 z by the minimum opening portions 35 z being irradiated withthe laser light L is transmitted to the areas overlapping with thevicinity of the minimum opening portions 35 z of the support jointportions E1 in plan view. Also, heat generated in the metal layer 16 bythe metal layer 16 being irradiated with the laser light L istransmitted to surroundings of the metal layer 16. As a result, theportions to which the heat is transmitted are melted and joined to eachother to form welded portions F (see FIG. 2B). At this time, becauseeach of the support joint portions E1 has a columnar structure and issufficiently thick, there is no possibility of being damaged byirradiation with the laser light L. Through the above steps, thesubstrate-with-support 1 is completed.

Subsequently, steps of mounting semiconductor chips 110 on thesubstrate-with-support 1 to manufacture semiconductor packages 100 willbe described. FIGS. 5A and 5B and FIGS. 6A and 6B are diagramsillustrating an example of the steps of manufacturing the semiconductorpackages 100 using the substrate-with-support 1 according to the firstembodiment, and illustrate cross sections corresponding to FIG. 2A.

First, in the step illustrated in FIG. 5A, the substrate-with-support 1is turned upside down with respect to FIG. 4C and placed on a heaterplate 400 having a flat plate portion 410 and a protruding portion 420.At this time, the substrate-with-support 1 is held on the heater plate400 in a state where the support 30 is in contact with the upper surfaceof the flat plate portion 410 and the solder resist layer 14 is incontact with the upper surface of the protruding portion 420. Next, thesemiconductor chips 110 are mounted on the respective areas C of thesubstrate-with-support 1. Specifically, for example, on the solderresist layer 24 of each of the areas C, the corresponding one of thesemiconductor chips 110 is fixed in a face-up state via a die attachfilm or the like (not illustrated). Then, for example, while heatingelectrodes (not illustrated) of the semiconductor chips 110 and themetal layer 26 exposed in the opening portions 24 x of the solder resistlayer 24 with the heater plate 400, metal wires 120 such as copper wiresor gold wires are electrically connected by wire bonding. Note that thesemiconductor chips 110 may be flip-chip mounted on thesubstrate-with-support 1.

Next, in the step illustrated in FIG. 5B, the substrate-with-support 1,on which the semiconductor chips 110 are mounted, is detached from theheater plate 400, turned upside down, and set in a mold for resinsealing. Specifically, the substrate-with-support 1, on which thesemiconductor chips 110 are mounted, is sandwiched by a lower mold 500having a frame portion 510 and a cavity portion 520 and an upper mold600 having a flat plate portion 610 and a protruding portion 620. Atthis time, in a state in which the solder resist layer 24 of the supportjoint portions E1 is in contact with the upper surface of the frameportion 510, the support 30 is in contact with the lower surface of theflat plate portion 610, and the solder resist layer 14 of the firstwiring area D1 and the second wiring area D2 is in contact with thelower surface of the protruding portion 620, the substrate-with-support1 is held between the lower mold 500 and the upper mold 600. Then, aresin is injected into the cavity portion 520 and hardened, therebyforming a sealing resin (encapsulation resin) 130 covering thesemiconductor chips 110 and the metal wires 120.

Next, in the step illustrated in FIG. 6A, the substrate-with-support 1,on which the sealing resin 130 is formed, is detached from the lowermold 500 and the upper mold 600, and solder balls 140 are formed on themetal layer 16 exposed in the opening portions 14 x of the solder resistlayer 14. For example, the solder balls 140 can be famed by afterapplying a flux as a surface treatment agent on the metal layer 16exposed in the opening portions 14 x, mounting solder balls, reflowingat a temperature of approximately 240° C. to 260° C., and thereaftercleaning the surface to remove the flux.

Next, in the step illustrated in FIG. 6B, the respective areas C areseparated by using a slicer or the like. Thereby, a plurality ofsemiconductor packages 100 are completed. At the same time, the outerperipheral area D4 and the separating area D3 of the substrate 10 areseparated from the semiconductor packages 100 together with the support30. Note that because the semiconductor packages 100 have sufficientstrength by the sealing resin 130, even without the support 30, there isno problem in handling thereafter.

In this manner, in the substrate-with-support 1, because the support 30made of metal, whose size is substantially the same size as that of thesubstrate 10, is joined on the substrate 10, handling in themanufacturing processes of semiconductor packages can be enhanced.

Also, because the first wiring area D1 and the second wiring area D2 ofthe substrate 10 are exposed from the support 30, a process flow that isthe same as that for a conventional substrate without a support can beadopted. That is, it is possible to carry out an electrical test byapplying probe to pads formed on the front and rear surfaces of thefirst wiring area D1 and the second wiring area D2 of the substrate 10,and to check the appearance quality of the front and rear surfaces ofthe first wiring area D1 and the second wiring area D2. Therefore, it ispossible to determine whether a single substrate-with-support 1 is agood product or a defective good product. Thus, because only goodproducts can be put into the steps of manufacturing process ofsemiconductor packages, the yield rate of semiconductor packages can beenhanced.

Also, although the support 30 is joined to the substrate 10 by joiningthe protruding portions 33 of the support 30 to the support jointportions E1 of the substrate 10, exposed portions (on the upper surfaceof the metal layer 16), joined with the protruding portions 33, of thesupport joint portions E1 are recessed portions recessed by one stepfrom the surface of the solder resist layer 14. Therefore, it ispossible to easily position the protruding portions 33 on the uppersurface of the metal layer 16 in the recessed portions.

Also, the through holes 35 are provided in the portions of theprotruding portions 33 of the support 30, and in each of the throughholes 35, the minimum opening portion 35 z, which protrudes most towardthe center in the through hole 35, is provided. Thus, when the support30 is joined to the substrate by lase wielding, the laser light L,emitted into the through holes 35 s, is emitted to the vicinities of theminimum opening portions 35 z and to the metal layer 16 passing throughthe through holes 35. Therefore, the support 30 can be joined to thesubstrate with a small irradiation power. Thereby, thermal damage of thesubstrate 10 can be suppressed.

Also, by locating the minimum opening portion 35 z below the center inthe thickness direction of the inner wall in each of the through holes35, the melted portions of the support 30 and the substrate 10 comeclose to each other, and therefore the support 30 can be joined to thesubstrate 10 with a further smaller irradiation power. Thereby, thermaldamage of the substrate 10 can be further suppressed.

Also, by providing the protruding portions 33 on the support 30, a gapis formed between the outer peripheral area D4 of the substrate 10 andthe lower surface of the outer frame portion 31 of the support 30 andbetween the separating area D3 of the substrate 10 and the lower surfaceof the bridge portion 32. Thus, it is possible to prevent teeth of ablade used for cutting from being into contact with the support 30 bycutting from the opposite side of the support 30 at the time ofseparation, and it is possible to avoid shortening the life of theblade.

Note that an example in which the number of areas C in each of the firstwiring area D1 and the second wiring area D2 of the substrate 10 istwenty is described. The number of areas C in the first wiring area D1and the second wiring area D2 can be determined as suited. Also, withoutproviding a separating area D3, one wiring area may be defined only byan outer peripheral area D4. Alternatively, a plurality of separatingareas D3 may be provided such that a plurality of wiring areas aredefined by the plurality of separating areas D3 and the outer peripheralarea D4. Alternatively, a separating area D3 having a cross shape or thelike may be provided such that a plurality of wiring areas are definedby the separating area D3 having a cross shape or the like and the outerperipheral area D4. The shape of the support 30 is determined inaccordance with the shapes of the separating area(s) D3 and the outerperipheral area D4 of the substrate 10, and in any case, the shape ofthe support 30 is formed to expose the wiring area(s).

<Variation Example 1 of First Embodiment>

Although an example in which the support 30 is provided on the solderball mounting side of the substrate is described in the firstembodiment, as variation example 1 of the first embodiment, an examplein which the support 30 is provided on the semiconductor chip mountingside of the substrate is described. Note that in variation example 1 ofthe first embodiment, descriptions of constituent elements that are thesame as those of the first embodiment previously described may beomitted as appropriate.

FIGS. 7A and 7B are diagrams illustrating an example of asubstrate-with-support 1A according to variation example 1 of the firstembodiment. FIG. 7A is a cross-sectional view of thesubstrate-with-support 1A corresponding to FIG. 2A, and FIG. 7B is apartially enlarged cross-sectional view in the vicinity of the outerperipheral area D4 of FIG. 7A.

With reference to FIGS. 7A and 7B, the substrate-with-support 1A differsfrom the substrate-with-support 1 (refer to FIGS. 2 and the like) inthat the substrate 10 having the support joint portions E1 are replacedwith a substrate 10A having support joint portions E2. In the substrate10A, the wiring pattern 13 b is covered by the solder resist layer 14,and the lower surface of the metal layer 26 constituting the supportjoint portion E2 is exposed in the opening portions 24 x of the solderresist layer 24. Note that due to a reason similar to that in the firstembodiment, the metal layers 15 and 16 are not provided in the supportjoint portions E2.

In the substrate-with-support 1A, the support 30 is joined to the solderresist layer 24 side of the substrate 10A. Specifically, in thesubstrate-with-support 1A, the lower surface of the metal layer 26 ofthe support joint portions E2 exposed in the opening portions 24 x ofthe solder resist layer 24 is in contact with the tips of the protrudingportions 33, such that the support joint portions E2 and the protrudingportion 33 are joined to each other. The support joint portions E2 andthe protruding portions 33 can be joined by, for example, welding.

The substrate-with-support 1A can be manufactured by steps similar tothe steps illustrated in FIGS. 4A to 4C of the first embodiment.However, the tips of the respective protruding portions 33 of thesupport 30 are joined to the metal layer 26, which serves as the exposedportions of the support joint portions E2 of the substrate 10A.

Subsequently, steps of mounting semiconductor chips 110 on thesubstrate-with-support 1A to manufacture semiconductor packages 100 willbe described. FIGS. 8A and 8B and FIGS. 9A and B are diagramsillustrating an example of the steps of manufacturing the semiconductorpackages 100 using the substrate-with-support 1A according to variationexample 1 of the first embodiment, and illustrate cross sectionscorresponding to FIG. 7A.

First, in the step illustrated in FIG.8A, the substrate-with-support 1Ais turned upside down with respect to FIG. 7A and placed on a heaterplate 700. At this time, the substrate-with-support 1A is held on theheater plate 700 in a state where the solder resist layer is in contactwith the upper surface of the heater plate 700. Next, similarly to thestep illustrated in FIG. 5A of the first embodiment, the semiconductorchips 110 are mounted on the respective areas C of thesubstrate-with-support 1A.

Next, in the step illustrated in FIG. 8B, the substrate-with-support 1A,on which the semiconductor chips 110 are mounted, is detached from theheater plate 700, turned upside down, and set in a mold for resinsealing. Specifically, the substrate-with-support 1A, on which thesemiconductor chips 110 are mounted, is sandwiched by a lower mold 800having a flat plate portion 810 and a frame portion 820 protruding fromthe flat plate portion 810 and an upper mold 900 having a flat plateshape. At this time, in a state in which the support 30 is in contactwith the upper surface of the flat plate portion 810, the solder resistlayer 24 of the support joint portions E2 is in contact with the uppersurface of the frame portion 820, and the solder resist layer 14 is incontact with the lower surface of the upper mold 900, thesubstrate-with-support 1A is held between the lower mold 800 and theupper mold 900. Then, a resin is injected into an area surrounded by theframe portion 820 and hardened, thereby forming the sealing resin 130covering the semiconductor chips 110 and the metal wires 120.

Next, in the step illustrated in FIG. 9A, the substrate-with-support 1A,on which the sealing resin 130 is formed, is detached from the lowermold 800 and the upper mold 900, and similarly to the step illustratedin FIG. 6A of the first embodiment, solder balls 140 are formed on themetal layer 16 exposed in the opening portions 14 x of the solder resistlayer 14.

Next, in the step illustrated in FIG. 9B, the respective areas C areseparated by using a slicer or the like. Thereby, a plurality ofsemiconductor packages 100 are completed. At the same time, the outerperipheral area D4 and the separating area D3 of the substrate 10A areseparated from the semiconductor packages 100 together with the support30. Note that because the semiconductor packages 100 have sufficientstrength by the sealing resin 130, even without the support 30, there isno problem in handling thereafter.

In this way, even in a case where the support 30 is provided on thesemiconductor chip mounting side of the substrate 10A, effects similarto those of the first embodiment can be obtained.

<Variation Example 2 of First Embodiment>

As Variation example 2 of the first embodiment, an example will bedescribed whose layer structure of support joint portions differs fromthat that of the first embodiment. Note that in variation example 2 ofthe first embodiment, descriptions of constituent elements that are thesame as those of the first embodiment previously described may beomitted as appropriate.

FIGS. 10A and 10B are diagrams illustrating an example of asubstrate-with-support 1B according to variation example 2 of the firstembodiment. FIG. 10A is a cross-sectional view of thesubstrate-with-support 1B corresponding to FIG. 2A, and FIG. 10B is apartially enlarged cross-sectional view in the vicinity of the outerperipheral area D4 of FIG. 10A.

With reference to FIGS. 10A and 10B, the substrate-with-support 1Bdiffers from the substrate-with-support 1 (refer to FIGS. 2 and thelike) in that the substrate 10 having the support joint portions E1 arereplaced with a substrate 10B having support joint portions E3. Thesupport joint portions E3 of the substrate 10B have no metal layers 15,16, 25, and 26 unlike the support joint portions E1, and the uppersurface of the wiring layer 13 is exposed in the opening portions 14 xof the solder resist layer 14.

In the substrate-with-support 1B, the support 30 is joined to the wiringlayer 13 exposed in the opening portions 14 x of the solder resist layer14 of the substrate 10B. Specifically, in the substrate-with-support 1B,the upper surface of the wiring layer 13 of the support joint portionsE3 exposed in the opening portions 14 x of the solder resist layer 14 isin contact with the tips of the protruding portions 33, such that thesupport joint portions E3 and the protruding portion 33 are joined toeach other. The support joint portions E3 and the protruding portions 33can be joined by, for example, welding.

To manufacture the substrate 10B, in the step of forming the metallayers 15, 16, 25, and 26 by a plating process or the like in the firstwiring area D1 and the second wiring area D2, the lower surface of thewiring layer 23 and the upper surface of the wiring layer 13 of thesupport joint portions E3 may be masked.

In a case where the wiring layer 13 and the protruding portions 33 areformed of copper or a copper alloy, the wiring layer 13 and theprotruding portions 33, which are made of the same type of metal, aredirectly in contact without the presence of metal layers 15 and 16 madeof dissimilar metals between the wiring layer 13 and protruding portions33. Therefore, when the wiring layer 13 and the protruding portions 33are joined by welding, it is possible to join the support 30 to thesubstrate 10B with a further smaller irradiation power than in the firstembodiment and variation example 1. Thereby, thermal damage of thesubstrate 10B can be suppressed.

Note that depending on the required specifications, metal layers 15, 16,25, and 26 may not be formed for all of the first wiring area D1, thesecond wiring area D2, and the support joint portions E3.

Also, in variation example 1 of the first embodiment, it is possible toadopt the support joint portions E3, and to achieve effects similar tothose described above.

Although the preferred embodiment and the variation examples have beendescribed above in detail, the present invention is not limited to theembodiment and the variation examples described above, and variousvariations and substitutions may be made for the embodiment and thevariation examples described above without departing from the scope ofthe present invention.

For example, although the substrate and the support are joined bywelding in the example described in the first embodiment and variationexamples 1 and 2, the joining method is not limited to this and thesubstrate and the support may be joined by a method other than welding.The substrate and the support can be joined using, for example, solderor an adhesive. In this case, the solder or adhesive in paste state maybe poured into the through holes formed in the protruding portions ofthe support to be cured.

Various aspects of the subject-matter described herein may be set outnon-exhaustively in the following numbered clauses:

1. A method of manufacturing a substrate-with-support, the methodincluding:

preparing a substrate having a wiring area, an outer peripheral areaprovided on an outer peripheral side of the wiring area, and a pluralityof support joint portions being provided on the outer peripheral area;

preparing, by half-etching from both sides of a metal plate, a supportmade of metal having an outer frame portion arranged to face the outerperipheral area and to expose the wiring area, and a plurality ofprotruding portions being provided on the outer frame portion; andjoining the support joint portions and the protruding portions to eachother.

2. The method of clause 1,

wherein the respective support joint portions are conductor portions,

wherein by the half-etching, through holes penetrating the outer frameportion and the protruding portions in a thickness direction are formedsuch that, in each of the through holes, a first hole and a second holeare in communication, the first hole is opened on an outer side of theouter frame portion and whose opening size decreases toward theprotruding portion, the second hole is opened on a tip side of theprotruding portion and whose opening size decreases toward the firsthole, and a portion where the first hole and the second hole are incommunication is a minimum opening portion, and

wherein, in the joining, laser light is emitted into the through holesto melt and integrate at least part of the protruding potions and theconductor portions to form welded portions.

All examples and conditional language provided herein are intended forpedagogical purposes of aiding the reader in understanding the inventionand the concepts contributed by the inventor to further the art, and arenot to be construed as limitations to such specifically recited examplesand conditions, nor does the organization of such examples in thespecification relate to a showing of the superiority or inferiority ofthe invention.

Although one or more embodiments of the present invention have beendescribed in detail, it should be understood that the various changes,substitutions, and alterations could be made hereto without departingfrom the spirit and scope of the invention.

What is claimed is:
 1. A substrate-with-support comprising: a substratehaving a wiring area, an outer peripheral area provided on an outerperipheral side of the wiring area, and a plurality of support jointportions being provided on the outer peripheral area; and a support madeof metal having an outer frame portion arranged to face the outerperipheral area and to expose the wiring area, and a plurality ofprotruding portions being provided on the outer frame portion, whereinthe support joint portions and the protruding portions are joined toeach other.
 2. The substrate-with-support according to claim 1, whereinthe respective support joint portions are conductor portions havingexposed portions provided in an insulating layer constituting thesubstrate and partially exposed from the insulating layer, and whereinthe exposed portions are in contact with tips of the'respectiveprotruding portions such that the conductor portions and the protrudingportions are joined to each other.
 3. The substrate-with-supportaccording to claim 2, wherein the substrate includes a plurality ofstacked insulating layers, and wherein each of the conductor portionshas a columnar structure across the plurality of insulating layers. 4.The substrate-with-support according to claim 3, wherein the columnarstructure includes a plurality of via wirings foamed in differentinsulating layers.
 5. The substrate-with-support according to claim 2,wherein at least part of the protruding potions and the conductorportions are integrated to form welded portions.
 6. Thesubstrate-with-support according to claim 1, wherein through holespenetrating the outer frame portion and the protruding portions in athickness direction are provided, and wherein, for each of the throughholes, a minimum opening portion, whose opening is smallest within thethrough hole, is formed on the support joint portion side with respectto a center in the thickness direction of an inner wall of the throughhole.
 7. The substrate-with-support according to claim 6, wherein eachof the through holes is formed such that a first hole and a second holeare in communication, in which the first hole is opened on an outer sideof the outer frame portion and whose opening size decreases toward theprotruding portion, and the second hole is opened on a tip side of theprotruding portion and whose opening size decreases toward the firsthole, and wherein in each of the through holes, a portion where thefirst hole and the second hole are in communication is the minimumopening portion.
 8. The substrate-with-support according to claim 1,wherein the substrate includes a separating area that separates aportion surrounded by the outer peripheral area into a plurality ofwiring areas; and the plurality of wiring areas sectioned by the outerperipheral area and the separating area, the support joint portionsbeing provided on the outer peripheral area and the separating area,wherein the support includes a bridge portion formed integrally with theouter frame portion and arranged to face the separating area, theprotruding portions being provided on a side of the outer frame portionfacing the outer peripheral area and on a side of the bridge portionfacing the separating area, wherein the support joint portions, providedon the outer peripheral area, and the protruding portions, provided onthe outer frame portion, are joined to each other, and wherein thesupport joint portions, provided on the separating area, and theprotruding portions, provided on the bridge portion, are joined to eachother.